MENU

Development of an all dry single layer photolitography technology for sub-micron devices

All dry single layer photolithography technology for
sub-micron resolution, applied to multi-megabit devices

With the planned production of megabit and multi-megabit devices in the second half of this decade, an urgent need exists for a relatively simple, economically attractive and reliable photolithography process in the submicron region. Processes such as electron beam or X-ray lithography have a disadvantage of high investment, low throughput or delicate mask-making. Multi-layer photolithography allows the use of conventional exposer equipment in order to achieve submicron resolution but due to process complexity, suffers from uneconomic low yields. UCB has applied for a worldwide patent which covers a single-layer photoresist which after irradiation is submitted to a gas-phase silylation reaction followed by treatment with a reactive oxygen ion plasma. Preliminary results have shown that submicron resolution can be achieved and reproduced to a level of 0.5 micron without significant yield loss. The objective of this EUREKA project is an optimisation of: - the chemical structures of the photoresist and silylation agent - synthesis and purification - the exposure, the silylation, dry development and resist-stripping steps - the silyation equipment - the plasma equipment. This optimalisation is a prerequisite to the potential exploitation of this photolithography process.
Acronym: 
DESIRE
Project ID: 
38
Start date: 
01-09-1986
Project Duration: 
36months
Project costs: 
4 000 000.00€
Technological Area: 
Market Area: 

Raising the productivity and competitiveness of European businesses through technology. Boosting national economies on the international market, and strengthening the basis for sustainable prosperity and employment.